PART |
Description |
Maker |
NX5312_06 NX5312 NX5312EH-AZ NX5312EK-AZ NX531206 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
NX5310EK-AZ NX5310 NX5310EH-AZ NX531006 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
NX8316XC |
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
|
Renesas Electronics Corporation
|
NDL7513P NDL7514P1 NDL7515P1C NDL7515PC NDL7514P N |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
NEC Corp.
|
NX7363JB-BC-AZ |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
California Eastern Laboratories
|
NX7337BJ-AA |
1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MMF FOR OTDR APPLICATION
|
California Eastern Labs
|
NDL7603PC NDL7603P NDL7603P1C NDL7603P1D NDL7603P2 |
1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE 1 310纳米光纤通信InGaAsP多量子阱激光器激光二极管同轴模块 Opical Fiber Communications Laser Diode(光纤通信激光二极管) Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C
|
NEC, Corp. NEC Corp. NEC[NEC]
|
NX8561JC NX8501CC-BA NX8501BC-BA NX8501AC-BA NX856 |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION
|
NEC[NEC]
|
NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
NX7535BN-AA NX7535AN-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|